4Even I got B but ans is given as c
Awaiting more response
Which of the following statements is correct about the conduction of electricity in pure crystal of Si at room temparature?
(A)The conduction is due to the holes formed from the release of electrons
(B)The conduction is due to the movement of both the electrons released & holes formed
(C)The conduction is only due to the electrons present in fully occupied lowest energy states
(D)The conduction is due to only some electrons capable of leaving the bonds at room temparature
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11 Answers
49yeah lets see............i am in 11 n am not at ease with this chapter bt still my little conception tells me so.....it shud be B
1The conductivity of intrinsic semiconductors can be due to crystal defects or to thermal excitation. In an intrinsic semiconductor the number of electrons in the conduction band is equal to the number of holes in the valence band. An example is Hg0.8Cd0.2Te at room temperature.
The current flow in an intrinsic semiconductor is influenced by the density of energy states which in turn influences the electron density in the conduction band. This current is highly temperature dependent.
1"electrons present in fully occupied lowest energy states"
i guess this refers to fully filled conduction band
as conduction band is fully filled so electrons of conduction band can move from conduction to valence bands even at room temp..
a and b are wrong options bcoz holes ll be created only wen theres some doping but here its pure crystal
d is wrong bcoz at room temp bonds wont break so electrons cant leave the bonds
i suppose the question's easy just dat its asked in sum other way round than usual